tc51whm516axgn70 TOSHIBA Semiconductor CORPORATION, tc51whm516axgn70 Datasheet - Page 4

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tc51whm516axgn70

Manufacturer Part Number
tc51whm516axgn70
Description
Toshiba Mos Digital Integrated Circuit Silicon Gate Cmos, 2,097,152-word By 16-bit Cmos Pseudo Static Ram
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
AC CHARACTERISTICS AND OPERATING CONDITIONS
(Ta = = = = − − − − 25°C to 85°C, V
AC TEST CONDITIONS
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
Output load
Input pulse level
Timing measurements
Reference level
t
WC
WP
WR
RC
ACC
CO
OE
BA
COE
OEE
BE
OD
ODO
BD
OH
PM
PC
AA
AOH
CW
BW
AS
ODW
OEW
DS
DH
CS
CH
DPD
CHC
CHP
R
, t
SYMBOL
F
Read Cycle Time
Address Access Time
Chip Enable (
Output Enable Access Time
Data Byte Control Access Time
Chip Enable Low to Output Active
Output Enable Low to Output Active
Data Byte Control Low to Output Active
Chip Enable High to Output High-Z
Output Enable High to Output High-Z
Data Byte Control High to Output High-Z
Output Data Hold Time
Page Mode Time
Page Mode Cycle Time
Page Mode Address Access Time
Page Mode Output Data Hold Time
Write Cycle Time
Write Pulse Width
Chip Enable to End of Write
Data Byte Control to End of Write
Address Set-up Time
Write Recovery Time
Data Set-up Time
Data Hold Time
CE2 Set-up Time
CE2 Hold Time
CE2 Pulse Width
CE2 Hold from
CE2 Hold from Power On
WE Low to Output High-Z
WE High to Output Active
PARAMETER
DD
PARAMETER
CE1
CE1
= = = = 2.6 to 3.3 V) (See Note 5 to 11)
) Access Time
MIN
300
65
10
10
65
30
10
65
50
60
60
30
10
30
0
0
0
0
0
0
0
0
65
TC51WHM516AXGN
10000
10000
10000
MAX
65
65
25
25
20
20
20
30
20
TC51WHM516AXGN65,70
30 pF + 1 TTL Gate
V
DD
CONDITION
MIN
300
V
70
10
10
70
30
10
70
50
60
60
30
10
30
V
− 0.2 V, 0.2 V
0
0
0
0
0
0
0
0
DD
DD
5 ns
× 0.5
× 0.5
70
2002-03-14 4/11
10000
10000
10000
MAX
70
70
25
25
20
20
20
30
20
UNIT
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ns
µs

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