sg25672rddr6h2bgic ETC-unknow, sg25672rddr6h2bgic Datasheet - Page 17

• Manufacturer Part Number: sg25672rddr6h2bgic
• Description: Dram Module Ddr Sdram 2gbyte 184rdimm
• Manufacturer: ETC-unknow

Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel:[phone] • Fax:[phone] • E-mail: [e-mail]
Europe: 5 Kelvin Park South, Kelvin South, East Kilbride, G75 ORH, United Kingdom • Tel: [phone] • Fax: [phone]
Asia/Pacific: Plot 18, Lrg Jelawat 4, Kawasan Perindustrian Seberang Jaya 13700, Prai, Penang, Malaysia • Tel: [phone] • Fax: [phone]
Parameter
Row Cycle Time
Refresh row cycle time
Row active time
RAS# to CAS# delay
Row precharge time
Row active to Row active delay
Write recovery time
Internal write to read command delay
Clock cycle time
Clock high level width
Clock low level width
DQS-out access time from CK/CK#
Output data access time from CK/CK#
DQS-DQ skew (DQS and associated DQ
signals)
Read Preamble
Read Postamble
Data out high impedence time from CK/CK#
Data out high impedence time from CK/CK#
CK to valid DQS-in
Write preamble setup time
Write preamble
DQS write postamble time
CL=2.0
CL=2.5
Device AC Characteristics
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
RC
RFC
RAS
RCD
RP
RRD
WR
WTR
CK
CH
CL
DQSCK
AC
DQSQ
RPRE
RPST
HZ
LZ
DQSS
WPRES
WPRE
WPST
Min
60
72
42
18
18
12
15
1
7.5
6.0
0.45
0.45
-0.60
-0.70
-
0.9
0.4
-
-0.70
0.75
0
0.25
0.4
6.0ns @ CL 2.5
DDR333B
Max
-
-
70K
-
-
-
-
-
12
12
0.55
0.55
+0.60
+0.70
+0.45
1.1
0.6
+0.70
+0.70
1.25
-
-
0.6
SG25672RDDR6H2BGUU
Unit
ns
ns
ns
ns
ns
ns
t
t
ns
ns
t
t
ns
ns
ns
t
t
ns
ns
t
ns
t
t
CK
CK
CK
CK
CK
CK
CK
CK
CK
Notes
7
7
2
3
July 5, 2007
17