RX1214B170W Philips Semiconductors, RX1214B170W Datasheet - Page 6

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RX1214B170W

Manufacturer Part Number
RX1214B170W
Description
Microwave power transistor
Manufacturer
Philips Semiconductors
Datasheet
Philips Semiconductors
List of components (see Fig.3)
1997 Feb 18
handbook, halfpage
C1
C2
C3
C4
C5
L1, L2
L3
COMPONENT
Microwave power transistor
Class C pulse operation.
t
In broadband test circuit as shown in Fig.3.
p
(dB)
G p
= 500 s; = 10%; V
Fig.4 Power gain as a function of frequency.
8
7
6
1.2
variable gigatrim capacitor
variable gigatrim capacitor
capacitor
tantalum capacitor
feedthrough bypass capacitor
0.65 mm copper wire;
total length = 24 mm;
height of loop = 10 mm
4 turns 0.65 mm copper wire;
total length = 4 mm;
internal diameter = 3 mm
CC
= 42 V; P
1.3
o
DESCRIPTION
= 170 W.
f (GHz)
MLC454
1.4
6
0.6 to 5 pF
0.8 to 8 pF
100 pF
10 F; 50 V
handbook, halfpage
Class C pulse operation.
t
In broadband test circuit as shown in Fig.3.
VALUE
p
(%)
= 500 s; = 10%; V
c
51
49
47
Fig.5
1.2
Collector efficiency as a function.
of frequency.
Tekelec AT3-7271SL
Tekelec 729-1
ATC 100A101kp50x
Erie 1250-003
CC
= 42 V; P
ORDERING INFORMATION
1.3
o
= 170 W.
RX1214B170W
Product specification
f (GHz)
MLC455
1.4

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