RX1214B170W Philips Semiconductors, RX1214B170W Datasheet - Page 4

• Manufacturer Part Number: RX1214B170W
• Description: Microwave power transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
THERMAL CHARACTERISTICS
Notes
1. See “Mounting recommendations in the General part of handbook SC19a”.
2. Equivalent thermal impedance under pulsed microwave operating conditions.
CHARACTERISTICS
T
APPLICATION INFORMATION
Microwave performance up to T
Note
1. Equivalent thermal impedance under pulsed microwave operating conditions.
1997 Feb 18
R
R
Z
I
I
V
Class C
OPERATION
mb
CBO
EBO
th
(BR)CES
th j-mb
th mb-h
MODE OF
Microwave power transistor
SYMBOL
SYMBOL
= 25 C unless otherwise specified.
thermal resistance from junction to mounting base T
thermal resistance from mounting base to heatsink note 1
thermal impedance from junction to heatsink
collector cut-off current
emitter cut-off current
collector-emitter breakdown voltage
t
p
= 500 s; = 10%
CONDITIONS
PARAMETER
mb
PARAMETER
= 25 C in a common-base test circuit as shown in Fig.3; note 1.
1.2 to 1.4
(GHz)
f
I
I
I
E
C
C
= 0; V
= 0; V
= 60 mA; V
4
V
(V)
42
CONDITIONS
CC
CB
EB
= 50 V
= 1.5 V
t
notes 1 and 2
p
BE
j
= 500 s;
= 120 C
CONDITIONS
= 0
(W)
170
P
L
= 10%;
65
MIN.
typ. 7.2
(dB)
G
6.7
RX1214B170W
p
MAX.
20
2
0.28
1.9
0.2
Product specification
MAX.
typ. 45
mA
mA
V
(%)
40
UNIT
C
UNIT
K/W
K/W
K/W