RX1214B170W Philips Semiconductors, RX1214B170W Datasheet - Page 3

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RX1214B170W

Manufacturer Part Number
RX1214B170W
Description
Microwave power transistor
Manufacturer
Philips Semiconductors
Datasheet
Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Up to 0.2 mm from ceramic.
1997 Feb 18
handbook, halfpage
V
V
V
V
I
P
T
T
T
C
SYMBOL
stg
j
sld
CBO
CES
CEO
EBO
tot
Microwave power transistor
t
P tot
p
(W)
= 150 s; = 5%.
400
300
200
100
0
0
Fig.2 Power derating curve.
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
storage temperature
junction temperature
soldering temperature
50
PARAMETER
100
150
T
mb
MLC453
( C)
o
200
open emitter
R
open base
open collector
t
T
t
p
mb
BE
3
10 s; note 1
150 s;
= 0
75 C; t
CONDITIONS
p
5%
150 s;
5%
RX1214B170W
MIN.
65
Product specification
65
65
15
3
15
350
+200
200
235
MAX.
V
V
V
V
A
W
UNIT
C
C
C

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