BLT52 Philips Semiconductors, BLT52 Datasheet - Page 5
BLT52
Manufacturer Part Number
BLT52
Description
UHF power transistor
Manufacturer
Philips Semiconductors
Datasheet
1.BLT52.pdf
(12 pages)
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Philips Semiconductors
APPLICATION INFORMATION
RF performance at T
Ruggedness in class-B operation
The BLT52 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: CW, class-B operation; f = 470 MHz; V
1998 Jan 28
handbook, halfpage
CW, class-B
UHF power transistor
MODE OF OPERATION
CW, class-B operation; f = 470 MHz; V
tuned at P
Fig.5
(dB)
G p
10
8
6
4
2
0
0
Power gain and collector efficiency as
functions of load power; typical values.
L
= 3 W; T
mb
2
mb
60 C.
60 C in a common emitter test circuit.
4
G p
C
CE
= 6 V;
(MHz)
470
6
f
P L (W)
MBK250
8
100
80
60
40
20
0
(%)
C
V
(V)
7.5
6
CE
5
CE
handbook, halfpage
= 9 V and P
CW, class-B operation; f = 470 MHz; V
tuned at P
Fig.6
(W)
P L
10
8
6
4
2
0
0
L
Load power as a function of input power;
typical values.
(W)
P
= 3 W; T
7
3
L
L
= 7 W; T
mb
1
60 C.
mb
typ. 9.5
typ. 9.5
60 C.
(dB)
G
8
8
p
CE
= 6 V;
2
Product specification
P IN (W)
MGD257
BLT52
typ. 65
typ. 55
(%)
3
50
50
C