BLT52 Philips Semiconductors, BLT52 Datasheet - Page 4

• Manufacturer Part Number: BLT52
• Description: UHF power transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
CHARACTERISTICS
T
1998 Jan 28
handbook, halfpage
V
V
V
I
h
C
C
SYMBOL
j
CES
FE
(BR)CBO
(BR)CEO
(BR)EBO
= 25 C unless otherwise specified.
c
re
UHF power transistor
V
Measured under pulse conditions: t
Fig.3
CE
h FE
100
= 5 V; T
80
60
40
20
0
0
DC current gain as a function of collector
current; typical values.
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector leakage current
DC current gain
collector capacitance
feedback capacitance
j
= 25 C.
0.4
PARAMETER
0.8
p
1.2
300 s;
1.6
0.001.
I C (mA)
MGM486
2.0
open emitter; I
open base; I
open collector; I
V
I
I
I
C
E
C
BE
= i
= 1.2 A; V
= 0; V
= 0; V
e
= 0; V
4
CE
CE
CONDITIONS
handbook, halfpage
= 7.5 V; f = 1 MHz
CB
C
CE
= 7.5 V
I
E
= 40 mA
C
= 7.5 V; f = 1 MHz
(pF)
= i
= 5 V
C c
E
= 20 mA
Fig.4
e
50
40
30
20
10
= 4 mA
0
= 0; f = 1 MHz; T
0
Collector capacitance as a function of
collector-base voltage; typical values.
4
j
= 25 C.
8
20
10
3
25
MIN.
12
24
17
TYP.
Product specification
16
V CB (V)
1
MAX.
MGM487
BLT52
20
V
V
V
mA
pF
pF
UNIT