NES1823P-100 NEC, NES1823P-100 Datasheet - Page 3

• Manufacturer Part Number: NES1823P-100
• Description: 100W L-BAND PUSH-PULL POWER GaAs MESFET
• Manufacturer: NEC

TYPICAL CHARACTERISTICS (T
POWER MATCHING AND IM
production line. And the IM
power matching is designed as this, input impedance is gain-matching, output is matched with power matching
impedance which is calculated with large signal simulation model. The IM
impedance is matched to the impedance which has the direction of decreasing S
matched to the almost same as the efficiency matching impedance. Those typical RF data are shown as this, G
10.2 dB P
matching (@2 tone P
NEC produces two type matching circuits, power matching and IM
out
= 50.0 dBm IM
out
= 40 dBm).
3
matching circuit is useful for the customers to design the special tuning application. The
3
= –28 dBc at power matching, G
3
MATCHING
A
= +25°C)
Preliminary Data Sheet
L
= 10.0 dB P
3
matching. Power matching circuit is used our
3
out
matching is designed as this, input
21
= 49.3 dBm IM
phase-shift, output impedance is
NES1823P-100
3
= –31 dBc at IM
L
=
3
3