NES1823P-100 NEC, NES1823P-100 Datasheet - Page 2

• Manufacturer Part Number: NES1823P-100
• Description: 100W L-BAND PUSH-PULL POWER GaAs MESFET
• Manufacturer: NEC

RECOMMENDED OPERATING LIMITS
ELECTRICAL CHARACTERISTICS (T
2
Drain to Source Voltage
Gain Compression
Channel Temperature
Set Drain Current
Gate Resistance
Saturated Drain Current
Pinch-off Voltage
Thermal Resistance
Output Power
Drain Current
Drain Efficiency
Linear Gain
Notes 1. I
Note I
Dset
Parameter
Parameter
2. R
= 3.0 A each drain
Dset
Note 2
g
Note 1
is the series resistance between the gate supply and FET gate.
= 3.0 A each drain, V
Symbol
Symbol
Gcomp
V
I
I
P
T
R
Dset
R
DSS
V
G
I
DS
out
D
ch
th
D
g
p
L
DS
= 10 V, RF OFF.
V
V
Channel to Case
f = 2.2 GHz, V
P
I
Dset
A
DS
DS
in
Preliminary Data Sheet
= +25°C)
= +42.5 dBm, R
= 2.5 V, V
= 2.5 V, I
= 6.0 A Total (RF OFF)
Test Conditions
Test Condition
DS
GS
DS
= 330 mA
= 0 V
= 10 V
g
= 12.5
Note
MIN.
MIN.
–4.0
49.0
9.0
TYP.
TYP.
10.0
–2.6
50.0
20.0
11.0
6.0
0.6
10
76
50
NES1823P-100
MAX.
MAX.
+150
10.0
12.5
32.5
3.0
8.0
0.8
°C/W
dBm
Unit
Unit
dB
°C
dB
%
V
A
A
V
A