BFQ82 Siemens Semiconductor Group, BFQ82 Datasheet - Page 3

• Manufacturer Part Number: BFQ82
• Description: NPN Silicon RF Transistor (For low-noise/ high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 mA.)
• Manufacturer: Siemens Semiconductor Group

Electrical Characteristics
at T
Parameter
AC Characteristics
Transition frequency
I
I
Collector-base capacitance
V
Collector-emitter capacitance
V
Input capacitance
V
Output capacitance
V
Noise figure
I
I
I
Power gain
I
I
Transducer gain
I
Linear output voltage
two-tone intermodulation test
I
Third order intercept point
I
1)
f
1
C
C
C
C
C
C
C
C
C
C
CB
CE
EB
CE
= 806 MHz, f
= 5 mA, V
= 30 mA, V
= 5 mA, V
= 30 mA, V
= 10 mA, V
= 30 mA, V
= 30 mA, V
= 30 mA, V
= 40 mA, V
= 40 mA, V
A
= 0.5 V, I
= 10 V, V
= 10 V, V
= 10 V, V
= 25 ˚C, unless otherwise specified.
S
S
21e
12e
CE
CE
C
BE
BE
BE
CE
CE
CE
CE
CE
CE
CE
CE
= i
2
= 8 V, f = 500 MHz
= 8 V, f = 10 MHz, Z
= v
= v
= v
(k – k
= 8 V, f = 500 MHz
= 8 V, f = 800 MHz, Z
= 8 V, f = 2 GHz, Z
= 8 V, f = 1 GHz, Z
= 8 V, f = 2 GHz, Z
= 8 V, f = 1 GHz, Z
= 8 V, f = 800 MHz
= 810 MHz, Z
= 8 V, d
c
be
be
= 0, f = 1 MHz
be
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
2
– 1)
IM
= 60 dB,
S
= Z
L
0
0
0
S
= 50
S
= 50
= 50
= 50
S
= Z
= 75
= Z
Sopt
Sopt
Symbol
C
C
C
C
F
G
I S
V
IP
f
T
o1
cb
ce
ibo
obs
ma
3
21e
1)
= V
I
2
o2
min.
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Values
typ.
3.6
8
0.62
0.4
2.5
1.0
0.7
1.6
2.3
17
11
13.5
280
32
max.
–
–
–
–
–
–
–
–
–
–
–
–
–
–
BFQ 82
Unit
GHz
pF
dB
mV
dBm