BFQ82 Siemens Semiconductor Group, BFQ82 Datasheet - Page 2

• Manufacturer Part Number: BFQ82
• Description: NPN Silicon RF Transistor (For low-noise/ high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 mA.)
• Manufacturer: Siemens Semiconductor Group

Electrical Characteristics
at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-emitter cutoff current
V
Collector-base cutoff current
V
V
Emitter-base cutoff current
V
DC current gain
I
I
C
C
C
CE
CB
CB
EB
= 1 mA, I
= 5 mA, V
= 30 mA, V
A
= 20 V, V
= 10 V, I
= 10 V, I
= 1 V, I
= 25 ˚C, unless otherwise specified.
C
B
E
E
= 0
CE
= 0
BE
CE
= 0
= 0, T
= 8 V
= 0
= 8 V
A
= 125 ˚C
Symbol
V
I
I
I
h
CES
CB0
EB0
FE
(BR)CE0
min.
12
–
–
–
–
–
50
Values
typ.
–
–
–
–
–
110
120
max.
–
100
0.05
5
1
–
250
BFQ 82
Unit
V
–
A