BFQ82 Siemens Semiconductor Group, BFQ82 Datasheet - Page 18

• Manufacturer Part Number: BFQ82
• Description: NPN Silicon RF Transistor (For low-noise/ high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 mA.)
• Manufacturer: Siemens Semiconductor Group

Common Emitter Large Signal Parameters
Linear output voltage V
V
Note:
The transistor is driven by 2 adjacent signals f
carrier.
The distance d
(2f
d
where P
and V
The 3rd order intercept point IP
identical to P
IP
Linear output voltages for other d
f
2
IM
CE
= 810 MHz, Z
3
1
= P
(output) = P
= 8 V, d
– f
o
2
o
= linear output voltage of each carrier.
or 2f
– P
o
= 10 log (V
IM
IM
2
o
= 60 dB, f
:
– f
IM
o
S
1
+ d
= Z
between P
) is:
IM
L
o
2
/
= 50
2
.
/ (50
1
= 806 MHz,
o
= f (I
o
and the third order intermodulation products P
· 1 mW)) (dBm)
3
C
)
will be found by extrapolation to the point where P
IM
(e.g. 50 dB) can be calculated thereby.
1
, f
2
with equal output power levels P
IM
IM
o
BFQ 82
would be
for each