TPC8206 Toshiba Semiconductor, TPC8206 Datasheet - Page 6

• Manufacturer Part Number: TPC8206
• Description: TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
• Manufacturer: Toshiba Semiconductor

100
0.3
0.1
30
10
3
1
0.1
* Single pulse
Curves must be derated
linearly with increase in
temperature.
I D max (pulse) *
Ta = 25°C
0.3
Drain-source voltage V
1000
100
Safe operating area
0.1
10
0.001
1
1
Device mounted on a glass-epoxy board (a) (Note 2a)
Device mounted on a glass-epoxy board (b) (Note 2b)
t = 10 s
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual operation (Note 3b)
10 ms *
3
Single-device value at dual
operation
0.01
10
DS
V DSS max
1 ms *
(V)
30
(Note 3b)
0.1
100
Pulse width t
r
th
6
- t
1
w
w
(S)
10
100
Single pulse
(4)
(3)
(2)
(1)
1000
2003-02-18
TPC8206