TPC8206 Toshiba Semiconductor, TPC8206 Datasheet - Page 4

• Manufacturer Part Number: TPC8206
• Description: TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
• Manufacturer: Toshiba Semiconductor

0.5
0.3
10
20
16
12
50
30
10
8
6
4
2
0
8
4
0
5
3
1
0.1
0
0
Common source
Ta = 25°C
Pulse test
Common source
V DS = 10 V
Pulse test
0.3
0.2
Drain-source voltage V
Gate-source voltage V
1
8
10
Ta = -55°C
Drain current I
100
0.4
2
1
I
I
|Y
D
D
25
25
fs
– V
– V
6
5
| – I
GS
DS
4
100
D
0.6
3
3
D
Ta = -55°C
3.75
GS
DS
(A)
Common source
V DS = 10 V
Pulse test
3.5
(V)
(V)
V GS = 2.5 V
0.8
10
4
3.25
2.75
3.0
30
1
5
4
500
300
100
0.6
0.5
0.4
0.3
0.2
0.1
20
16
12
50
30
10
8
4
0
0
5
3
0.1
0
0
8
10
2
0.3
Drain-source voltage V
Gate-source voltage V
1
5
6
Drain current I
4
4
R
V
DS (ON)
2
1
I
DS
D
– V
V GS = 4 V
– V
6
3.75
DS
GS
– I
10
3
3
D
D
GS
8
DS
(A)
Common source
Ta = 25°C
Pulse test
Common source
Ta = 25°C
Pulse test
Common source
Ta = 25°C
Pulse test
3.5
I D = 5 A
(V)
(V)
V GS = 2.5 V
2.5
1.3
10
4
10
3.25
2.75
2003-02-18
TPC8206
3.0
12
30
5