TPC8206 Toshiba Semiconductor, TPC8206 Datasheet
TPC8206
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TPC8206 Summary of contents
Page 1
... GSS 1 1.0 D (2) P 0. 0. 150 °C ch -55 to 150 T °C stg 1 TPC8206 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-6J1E Weight: 0.080 g (typ.) Circuit Configuration 2003-02-18 ...
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... Symbol Single-device operation R th (ch-a) (1) (Note 3a) dual operation R th (ch-a) (2) (Note 3b) Single-device operation R th (ch-a) (1) (Note 3a) dual operation R th (ch-a) (2) (Note 3b) b) Device mounted on a glass-epoxy board ( TPC8206 Max Unit 83.3 °C/W 125 167 °C/W 278 FR-4 25.4 ´ 25.4 ´ 0.8 (unit: mm) (b) 2003-02-18 ...
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... Duty < 25°C) Symbol Test Condition I ¾ DRP DSF TPC8206 Min Typ. Max = 0 V ¾ ¾ ± ¾ ¾ 10 ¾ ¾ 60 ¾ ¾ 35 ¾ 1.3 2.5 ¾ ¾ ¾ ...
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... Drain-source voltage V 0.6 0.5 0.4 0.3 0.2 0 Gate-source voltage V 500 300 100 0.1 0.3 4 TPC8206 I – Common source 25°C Pulse test 3.75 3.5 3.25 3 – Common source Ta = 25°C Pulse test 2.5 1 ...
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... C rss 1 0 100 -80 -40 Dynamic input/output characteristics 50 (Note 2a (Note 2b 200 TPC8206 I – Common source Ta = 25°C Pulse test -0.4 -0.8 -1.2 -1.6 Drain-source voltage V ( – Common source ...
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... I D max (pulse Single pulse Ta = 25°C 0.3 Curves must be derated linearly with increase in temperature. V DSS max 0.1 0.1 0 Drain-source voltage Pulse width t (S) w (Note 3b) 100 6 TPC8206 (4) (3) (2) (1) Single pulse 100 1000 2003-02-18 ...
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... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 7 TPC8206 000707EAA 2003-02-18 ...