TPC8110 Toshiba Semiconductor, TPC8110 Datasheet - Page 4

• Manufacturer Part Number: TPC8110
• Description: TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
• Manufacturer: Toshiba Semiconductor

−10
−40
−30
−20
−10
100
0.5
0.3
−8
−6
−4
−2
50
30
10
−0.1
0
0
5
3
1
0
0
−8
−6
−5
Common source
V DS = −10 V
Pulse test
Common source
V DS = −10 V
Pulse test
−10
−0.3 −0.5
−0.2
−1
Drain-source voltage V
Gate-source voltage V
100
−3.0
Drain current I
25
−1
−3.25
−0.4
−2
I
−3.5
I
|Y
D
D
fs
– V
– V
−3.75
−4
| – I
−3
Ta = −55°C
GS
DS
Ta = −55°C
−0.6
D
−3
D
−5
GS
DS
(A)
V GS = −2.25 V
−10
Common source
Ta = 25°C
Pulse test
100
(V)
(V)
−0.8
−4
−2.75
−2.5
−30
25
−50
−1
−5
4
1000
−0.8
−0.6
−0.4
−0.2
−40
−30
−20
−10
500
300
100
50
30
10
−0.1
0
0
5
3
0
0
Common source
Ta = 25°C
Pulse test
−8
−10
−6
−0.3 −0.5
−2
−1
Drain-source voltage V
Gate-source voltage V
−5
−3.75
−3.5
Drain current I
−4
−4
R
−1
I D = −8.0 A
−2
V
DS (ON)
I
DS
D
−3.25
– V
−6
– V
−3 −5
DS
GS
– I
−3
D
D
V GS = −4 V
Common source
Ta = 25°C
Pulse test
−8
GS
DS
(A)
−2.0
−3.0
Common source
Ta = 25°C
Pulse test
−10
V GS = −2.25 V
(V)
(V)
−2.75
−4
−10
−2.5
−4.0
2002-05-24
−30
TPC8110
−10
−12
−50
−5