TPC8110 Toshiba Semiconductor, TPC8110 Datasheet - Page 3

• Manufacturer Part Number: TPC8110
• Description: TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
• Manufacturer: Toshiba Semiconductor

Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“miller”) charge
Drain reverse current
Forward voltage (diode)
Characteristics
Characteristics
Rise time
Turn-ON time
Fall time
Turn-OFF time
Pulse
(Note 1)
(Ta = = = = 25°C)
V
V
R
Symbol
Symbol
(BR) DSS
(BR) DSX
DS (ON)
V
Q
I
I
C
I
|Y
C
C
Q
GSS
DSS
DRP
V
t
t
Q
DSF
oss
on
off
gs1
t
t
iss
rss
th
gd
fs
r
f
g
|
V
V
I
I
V
V
V
V
V
Duty < = 1%, t
V
I
I
D
D
D
DR
V
GS
DS
DS
GS
GS
DS
DS
DD
= −10 mA, V
= −10 mA, V
= −8 A
GS
3
= −8 A, V
(Ta = = = = 25°C)
= −40 V, V
= −10 V, I
= −10 V, I
= −10 V, V
∼ − −32 V, V
= ±16 V, V
= −4 V, I
= −10 V, I
−10 V
0 V
Test Condition
Test Condition
w
D
GS
= 10 µs
D
D
D
GS
GS
GS
= −4.0 A
GS
DS
GS
= −1 mA
= −4.0 A
= −4.0 A

= 0 V
= 0 V
= 20 V
= 0 V
= 0 V
= 0 V, f = 1 MHz
= −10 V,
I
D
V
= −4 A
DD
∼ − −20 V
V
OUT
−0.8
Min
−40
−25
Min
















8
2180
Typ.
Typ.
275
330
115
6.0
5.5
27
17
16
15
30
48
12







2002-05-24
TPC8110
−2.0
Max
Max
±10
−10
−32
1.2
35
25













Unit
Unit
mΩ
µA
µA
pF
nC
ns
V
V
S
A
V