TPC8110 Toshiba Semiconductor, TPC8110 Datasheet

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TPC8110

Manufacturer Part Number
TPC8110
Description
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
Manufacturer
Toshiba Semiconductor
Datasheet

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Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications
Maximum Ratings
Small footprint due to small and thin package
Low drain-source ON resistance: R
High forward transfer admittance: |Y
Low leakage current: I
Enhancement-mode: V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation (t = 10 s)
Drain power dissipation (t = 10 s)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy
Channel temperature
Storage temperature range
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the
This transistor is an electrostatic sensitive device. Please handle with
caution.
next page.
Characteristics
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
(Note 2a) (Note 4)
GS
DC
Pulsed(Note 1)
= 20 kΩ)
(Ta = 25°C)
DSS
th
(Note 2a)
(Note 2b)
= −0.8 to −2.0 V (V
(Note 1)
(Note 3)
= −10 µA (max) (V
DS (ON)
Symbol
V
V
V
fs
E
E
T
I
I
T
P
P
DGR
GSS
DSS
I
DP
AR
| = 16 S (typ.)
AS
AR
stg
D
ch
D
D
TPC8110
= 17 mΩ (typ.)
DS
DS
= −10 V, I
= −40 V)
−55 to 150
Rating
59.4
0.19
−40
−40
±20
−32
150
1.9
1.0
−8
−8
1
D
= −1 mA)
Unit
mJ
mJ
°C
°C
W
W
V
V
V
A
A
Weight: 0.080 g (typ.)
Circuit Configuration
JEDEC
JEITA
TOSHIBA
8
1
7
2
2-6J1B
6
3
2002-05-24
TPC8110
5
4
Unit: mm

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TPC8110 Summary of contents

Page 1

... V V DGR ± GSS − − − 0. 150 °C ch −55 to 150 T °C stg 1 TPC8110 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-6J1B Weight: 0.080 g (typ.) Circuit Configuration 2002-05-24 ...

Page 2

... January to December are denoted by letters respectively.) Symbol Max Unit R 65.8 °C/W th (ch-a) (Note 2a) R 125 °C/W th (ch-a) (Note 2b) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (unit: mm Ω TPC8110 FR-4 25.4 × 25.4 × 0.8 (unit: mm) (b) = −8 A 2002-05-24 ...

Page 3

... GS = − gs1 25°C) Symbol Test Condition  I DRP = − DSF TPC8110 Min Typ. Max = 0 V   ±   − −40   −25   −0.8  −2.0  ...

Page 4

... Gate-source voltage V 1000 Common source Ta = 25°C 500 Pulse test 300 25 100 −30 −50 −0.1 −0.3 −0.5 4 TPC8110 I – Common source −5 − 25°C Pulse test −3.75 −3.25 −3.5 −3.0 −2.75 −2 −2.25 V −2 −3 −4 − ...

Page 5

... C oss C rss −0.4 0 −80 −40 −30 −50 Dynamic Input/Output Characteristics − −30 −20 −10 0 150 175 0 5 TPC8110 I – −5 −3 − Common source Ta = 25°C Pulse test 0.4 0.8 1.2 1.6 Drain-source voltage V ( – Common source − ...

Page 6

... Single pulse Ta = 25°C −0.3 Curves must be derated linearly with increase in temperature. V DSS max −0.1 −0.1 −1 −10 Drain-source voltage V (V) DS − 0 Pulse width t (s) w −100 6 TPC8110 (2) (1) Single pulse 100 1000 2002-05-24 ...

Page 7

... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. • The information contained herein is subject to change without notice. 7 TPC8110 000707EAA 2002-05-24 ...

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