SI4967DY Vishay Siliconix, SI4967DY Datasheet - Page 4

• Manufacturer Part Number: SI4967DY
• Description: Dual P-Channel 1.8-V (G-S) MOSFET
• Manufacturer: Vishay Siliconix

www.vishay.com
Si4967DY
Vishay Siliconix
4
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.01
0.1
- 0.1
- 0.2
0.4
0.3
0.2
0.1
0.0
2
1
10
30
10
1
- 50
0.00
-4
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
- Source-to-Drain Voltage (V)
10
Single Pulse
T
Threshold Voltage
I
D
J
0.4
-3
= 250 mA
- Temperature (_C)
25
T
J
= 150_C
50
0.6
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
T
10
0.8
J
= 25_C
-2
100
1.0
125
Square Wave Pulse Duration (sec)
150
1.2
10
-1
1
0.10
0.08
0.06
0.04
0.02
0.00
30
25
20
15
10
5
0
0.01
0
On-Resistance vs. Gate-to-Source Voltage
V
0.1
1
GS
10
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
Notes:
P
- Gate-to-Source Voltage (V)
DM
JM
Single Pulse Power
- T
A
t
Time (sec)
2
1
= P
1
t
2
DM
Z
thJA
thJA
100
S-31989—Rev. C, 13-Oct-03
t
t
(t)
3
1
2
10
Document Number: 70813
= 93_C/W
I
D
= 7.5 A
4
100
600
600
5