SI4967DY Vishay Siliconix, SI4967DY Datasheet
SI4967DY
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SI4967DY Summary of contents
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... Top View Ordering Information: Si4967DY Si4967DY-T1 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Continuous Source Current (Diode Conduction) ...
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... Si4967DY Vishay Siliconix SPECIFICATIONS (T =25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge ...
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... Total Gate Charge (nC) g Document Number: 70813 S-31989—Rev. C, 13-Oct- 1 2.0 2.5 3.0 7000 6000 5000 4000 3000 2000 1000 Si4967DY Vishay Siliconix Transfer Characteristics 125_C C 6 25_C - 55_C 0 0.0 0.5 1.0 1 Gate-to-Source Voltage (V) GS Capacitance C iss C oss C ...
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... Si4967DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 150_C 0.00 0.2 0.4 0 Source-to-Drain Voltage (V) SD Threshold Voltage 0 250 mA D 0.3 0.2 0.1 0.0 - 0 Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www ...