SI4967DY Vishay Siliconix, SI4967DY Datasheet - Page 3

• Manufacturer Part Number: SI4967DY
• Description: Dual P-Channel 1.8-V (G-S) MOSFET
• Manufacturer: Vishay Siliconix

Document Number: 70813
S-31989—Rev. C, 13-Oct-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.10
0.08
0.06
0.04
0.02
0.00
30
24
18
12
6
0
5
4
3
2
1
0
0.0
0
0
V
V
I
GS
D
DS
0.5
= 7.5 A
On-Resistance vs. Drain Current
= 1.8 V
= 6 V
V
6
8
DS
Q
Output Characteristics
g
- Drain-to-Source Voltage (V)
I
1.0
D
- Total Gate Charge (nC)
V
- Drain Current (A)
GS
Gate Charge
12
16
= 5 thru 2.5V
1.5
18
24
2.0
V
V
GS
GS
2 V
1 V
1.5 V
= 2.5 V
= 4.5 V
24
32
2.5
3.0
30
40
7000
6000
5000
4000
3000
2000
1000
1.5
1.2
0.9
0.6
30
24
18
12
6
0
0
0.0
- 50
0
C
On-Resistance vs. Junction Temperature
rss
- 25
V
I
D
GS
= 7.5 A
0.5
V
V
= 4.5 V
DS
GS
T
C
Transfer Characteristics
J
0
oss
3
25_C
- Junction Temperature (_C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
T
C
= 125_C
Capacitance
25
1.0
Vishay Siliconix
50
6
C
iss
1.5
- 55_C
75
Si4967DY
100
9
www.vishay.com
2.0
125
150
2.5
12
3