Si4565DY Vishay Siliconix, Si4565DY Datasheet - Page 7

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Si4565DY

Manufacturer Part Number
Si4565DY
Description
N- and P-Channel 40-V (D-S) MOSFET
Manufacturer
Vishay Siliconix
Datasheet

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Document Number: 73224
S-50033—Rev. A, 17-Jan-05
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
−0.2
−0.4
0.6
0.4
0.2
0.0
0.01
0.1
−50
2
1
10
−4
−25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0
T
Threshold Voltage
J
− Temperature (_C)
10
25
−3
I
D
50
= 250 mA
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
10
100
100
0.1
10
−2
1
0.1
Safe Operating Area, Junction-to-Ambient
125
*r
*V
Limited
DS(on)
I
D(on)
GS
Single Pulse
T
A
u minimum V
150
= 25_C
New Product
V
Limited
DS
10
− Drain-to-Source Voltage (V)
−1
1
BV
GS
DSS
at which r
Limited
DS(on)
10
1
I
DM
50
40
30
20
10
0.001
is specified
0
Limited
1 ms
10 ms
100 ms
1 s
10 s
dc
0.01
100
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
Single Pulse Power
− T
0.1
t
A
1
Time (sec)
= P
t
2
Vishay Siliconix
DM
Z
thJA
1
100
thJA
t
t
1
2
(t)
= 85_C/W
Si4565DY
10
P-CHANNEL
www.vishay.com
600
100
600
7

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