Si4565DY Vishay Siliconix, Si4565DY Datasheet

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Si4565DY

Manufacturer Part Number
Si4565DY
Description
N- and P-Channel 40-V (D-S) MOSFET
Manufacturer
Vishay Siliconix
Datasheet

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SI4565DY
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Si4565DY-T1-E3
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Notes
a.
Document Number: 73224
S-50033—Rev. A, 17-Jan-05
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipatio
Maximum Power Dissipatio
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Maximum Junction to Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
N-Channel
N-Channel
P Channel
P-Channel
Surface Mounted on 1” x 1” FR4 Board.
Ordering Information: Si4565DY—E3
V
G
G
S
S
1
1
2
2
DS
−40
40
40
40
(V)
Parameter
Parameter
1
2
3
4
a
a
J
J
= 150_C)
= 150_C)
Si4565DY-T1—E3 (with Tape and Reel)
0.072 @ V
0.054 @ V
a
a
0.045 @ V
Top View
0.040 @ V
SO-8
N- and P-Channel 40-V (D-S) MOSFET
r
DS(on)
a
a
GS
GS
GS
GS
(W)
= −4.5 V
= −10 V
Steady State
Steady State
= 4.5 V
= 10 V
8
7
6
5
t v 10 sec
L = 0 1 mH
L = 0.1 mH
T
T
T
T
a
A
A
A
A
= 25_C
= 70_C
= 25_C
= 70_C
D
D
D
D
1
1
2
2
I
D
−4.5
−3.9
5.2
4.9
(A)
A
Symbol
Symbol
= 25_C UNLESS OTHERWISE NOTED)
T
R
R
R
J
V
V
E
I
I
P
P
, T
thJA
thJF
DM
I
I
I
AS
GS
DS
AS
New Product
D
D
S
D
D
Q
stg
g
(Typ)
8
8
9
9
10 secs
Typ
5.2
4.2
1.7
2.0
1.3
52
90
32
N-Channel
N-Channel
"12
8.5
40
13
Steady State
G
1
FEATURES
D TrenchFETr Power MOSFET
D 100% R
D UIS Tested
APPLICATIONS
D CCFL Inverter
Max
N-Channel MOSFET
62.5
110
40
3.9
3.1
0.9
1.1
0.7
−55 to 150
D
S
1
1
g
30
Tested
10 secs
Typ
50
30
−4.5
−3.6
−1.7
85
1.3
2
P-Channel
P-Channel
Vishay Siliconix
G
"16
−40
16
13
2
Steady State
P-Channel MOSFET
Max
62.5
110
Si4565DY
40
−3.3
−2.7
−0.9
1.1
0.7
D
S
www.vishay.com
2
2
Unit
_C/W
C/W
Unit
mJ
_C
W
W
V
V
A
A
1

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Si4565DY Summary of contents

Page 1

... Top View Ordering Information: Si4565DY—E3 Si4565DY-T1—E3 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Continuous Source Current (Diode Conduction) ...

Page 2

... Si4565DY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Symbol Static Gate Threshold Voltage Gate Threshold Voltage V V Temperature Coefficient Temperature Coefficient Temperature Coefficient Temperature Coefficient DV DV GS(th) GS(th) Gate-Body Leakage Gate Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current ...

Page 3

... Q − Total Gate Charge (nC) g Document Number: 73224 S-50033—Rev. A, 17-Jan-05 New Product 1200 1000 Si4565DY Vishay Siliconix N-CHANNEL Transfer Characteristics 125_C C 4 25_C −55_C 0 0.0 0.5 1.0 1.5 2.0 V − Gate-to-Source Voltage (V) GS ...

Page 4

... Si4565DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 150_C J 1 0.0 0.2 0.4 0.6 V − Source-to-Drain Voltage (V) SD Threshold Voltage 0.4 0 250 mA D −0.0 −0.2 −0.4 −0.6 −50 − − Temperature (_C) J *Limited by r www.vishay.com 4 New Product T = 25_C J 0 ...

Page 5

... New Product Normalized Thermal Transient Impedance, Junction-to-Ambient −2 − Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot −2 10 Square Wave Pulse Duration (sec Si4565DY Vishay Siliconix N-CHANNEL Notes Duty Cycle ...

Page 6

... Si4565DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0. 0.04 0.02 0. − Drain Current (A) D Gate Charge 4 − Total Gate Charge (nC) g Source-Drain Diode Forward Voltage 20 10 ...

Page 7

... A 0.1 Single Pulse BV Limited DSS 0.01 0 − Drain-to-Source Voltage ( minimum V at which DS(on) −2 − Si4565DY Vishay Siliconix P-CHANNEL Single Pulse Power 0 0.001 0.01 0 Time (sec) Limited 100 100 is specified Notes ...

Page 8

... Si4565DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

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