Si4565DY Vishay Siliconix, Si4565DY Datasheet
Si4565DY
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Si4565DY Summary of contents
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... Top View Ordering Information: Si4565DY—E3 Si4565DY-T1—E3 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Continuous Source Current (Diode Conduction) ...
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... Si4565DY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Symbol Static Gate Threshold Voltage Gate Threshold Voltage V V Temperature Coefficient Temperature Coefficient Temperature Coefficient Temperature Coefficient DV DV GS(th) GS(th) Gate-Body Leakage Gate Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current ...
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... Q − Total Gate Charge (nC) g Document Number: 73224 S-50033—Rev. A, 17-Jan-05 New Product 1200 1000 Si4565DY Vishay Siliconix N-CHANNEL Transfer Characteristics 125_C C 4 25_C −55_C 0 0.0 0.5 1.0 1.5 2.0 V − Gate-to-Source Voltage (V) GS ...
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... Si4565DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 150_C J 1 0.0 0.2 0.4 0.6 V − Source-to-Drain Voltage (V) SD Threshold Voltage 0.4 0 250 mA D −0.0 −0.2 −0.4 −0.6 −50 − − Temperature (_C) J *Limited by r www.vishay.com 4 New Product T = 25_C J 0 ...
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... New Product Normalized Thermal Transient Impedance, Junction-to-Ambient −2 − Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot −2 10 Square Wave Pulse Duration (sec Si4565DY Vishay Siliconix N-CHANNEL Notes Duty Cycle ...
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... Si4565DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0. 0.04 0.02 0. − Drain Current (A) D Gate Charge 4 − Total Gate Charge (nC) g Source-Drain Diode Forward Voltage 20 10 ...
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... A 0.1 Single Pulse BV Limited DSS 0.01 0 − Drain-to-Source Voltage ( minimum V at which DS(on) −2 − Si4565DY Vishay Siliconix P-CHANNEL Single Pulse Power 0 0.001 0.01 0 Time (sec) Limited 100 100 is specified Notes ...
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... Si4565DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...