Si4565DY Vishay Siliconix, Si4565DY Datasheet - Page 4

• Manufacturer Part Number: Si4565DY
• Description: N- and P-Channel 40-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

www.vishay.com
4
Si4565DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
−0.0
−0.2
−0.4
−0.6
0.4
0.2
20
10
1
−50
0.0
−25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
T
Threshold Voltage
− Source-to-Drain Voltage (V)
0.4
J
− Temperature (_C)
25
T
J
= 150_C
0.6
50
I
D
= 250 mA
75
*Limited by r
0.8
100
0.01
100
T
0.1
10
J
1
1.0
0.1
= 25_C
125
DS(on)
*V
Safe Operating Area, Junction-to-Foot
GS
150
1.2
u minimum V
New Product
V
DS
Single Pulse
T
− Drain-to-Source Voltage (V)
C
1
= 25_C
GS
at which r
10
DS(on)
0.20
0.16
0.12
0.08
0.04
0.00
100
80
60
40
20
0
0.01
0.001
0
is specified
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
100 ms
1 s
10 s
dc
2
100
0.01
V
GS
− Gate-to-Source Voltage (V)
Time (sec)
4
T
0.1
A
T
A
= 125_C
= 25_C
S-50033—Rev. A, 17-Jan-05
6
Document Number: 73224
N-CHANNEL
I
D
= 5.2 A
1
8
10
10