BSP255 Philips Semiconductors (Acquired by NXP), BSP255 Datasheet - Page 8

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BSP255

Manufacturer Part Number
BSP255
Description
P-channel Enhancement Mode Vertical D-mos Transistor
Manufacturer
Philips Semiconductors (Acquired by NXP)
Datasheet
Philips Semiconductors
1996 Aug 05
handbook, halfpage
P-channel enhancement mode
vertical D-MOS transistor
V
k
GSth
Fig.12 Temperature coefficient of gate-source
=
1.4
k
1.2
1.0
0.8
0.6
------------------------------------- -
V
at V
GSth
V
75
GSth
DS
at 25 C
threshold voltage as a function of
junction temperature; typical values.
=V
at T
GS
j
25
; I
D
= 1 mA.
25
75
125
T j ( C)
MBH438
175
8
handbook, halfpage
(1) V
(2) V
k
Fig.13 Temperature coefficient of drain-source
=
k
2.4
2.0
1.6
1.2
0.8
0.4
---------------------------------------- -
R
GS
GS
DSon
R
75
DSon
= 4.5 V; I
= 2.8 V; I
at 25 C
on-state resistance as a function of
junction temperature; typical values.
at T
25
j
D
D
= 80 mA.
= 50 mA.
25
75
Product specification
(1)
125
T j ( C)
BSP255
MBH439
(2)
175

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