BSP255 Philips Semiconductors (Acquired by NXP), BSP255 Datasheet - Page 5

• Manufacturer Part Number: BSP255
• Description: P-channel Enhancement Mode Vertical D-mos Transistor
• Manufacturer: Philips Semiconductors (Acquired by NXP)

Philips Semiconductors
CHARACTERISTICS
T
1996 Aug 05
V
V
I
I
R
C
C
C
Q
Q
Q
Switching times (see Fig.11)
t
t
t
t
t
t
Source-drain diode
V
SYMBOL
j
DSS
GSS
d(on)
r
on
d(off)
f
off
(BR)DSS
GSth
SD
= 25 C unless otherwise specified.
DSon
iss
oss
rss
P-channel enhancement mode
vertical D-MOS transistor
g
gs
gd
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate leakage current
drain-source on-state resistance
input capacitance
output capacitance
reverse transfer capacitance
total gate charge
gate-source charge
gate-drain charge
turn-on delay time
rise time
turn-on switching time
turn-off delay time
fall time
turn-off switching time
source-drain forward voltage
PARAMETER
V
V
V
V
V
V
V
V
V
V
V
I
V
I
V
I
V
I
V
I
V
D
D
D
D
D
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
GD
= 160 mA; T
= 160 mA; T
= 160 mA; T
= 160 mA; R
= 160 mA; R
= 10 V; I
= 4.5 V; I
= 2.8 V; I
= 0; V
= 0; V
= 0; V
= 10 V; V
= 10 V; V
= 10 V; V
= 0 to 10 V; V
= 10 to 0 V; V
= 0; I
= 0; I
= V
= 0; V
= 20 V; V
DS
5
CONDITIONS
D
S
DS
DS
DS
; I
DS
= 0.5 A
= 10 A
D
= 50 V; f = 1 MHz
= 50 V; f = 1 MHz
= 50 V; f = 1 MHz
= 240 V
D
= 1 mA
D
D
DD
DD
DD
DS
amb
amb
amb
= 160 mA
gen
gen
= 80 mA
= 50 mA
= 0
= 50 V;
= 50 V;
= 50 V;
DD
DD
= 50
= 50
= 25 C
= 25 C
= 25 C
= 50 V;
= 50 V;
MIN.
300
0.8
45
15
3
2.3
0.1
0.7
2.4
1.6
4
13
12
25
TYP.
Product specification
17
20
25
MAX.
2
100
100
1.8
BSP255
V
V
nA
nA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
ns
V
UNIT