BSP255 Philips Semiconductors (Acquired by NXP), BSP255 Datasheet - Page 6

• Manufacturer Part Number: BSP255
• Description: P-channel Enhancement Mode Vertical D-mos Transistor
• Manufacturer: Philips Semiconductors (Acquired by NXP)

Philips Semiconductors
1996 Aug 05
handbook, halfpage
handbook, halfpage
P-channel enhancement mode
vertical D-MOS transistor
V
V
V GS
(V)
DD
DS
(mA)
Fig.7 Transfer characteristics; typical values.
800
600
400
200
I D
= 10 V; T
= 50 V: I
Fig.5
10
8
6
4
2
0
0
0
0
D
j
Gate-source voltage as a function of
total gate charge; typical values.
= 25 C.
= 180 mA.
0.5
2
1.0
4
1.5
6
2.0
8
V GS (V)
Q g (nC)
MBH443
MBH440
2.5
10
6
handbook, halfpage
handbook, halfpage
T
V
(1) T
(2) T
(3) T
Fig.8
j
GD
I SD
= 25 C.
(A)
(mA)
800
600
400
200
I D
2.5
2.0
1.5
1.0
0.5
= 0.
Fig.6 Output characteristics; typical values.
j
j
j
0
0
= 150 C.
= 25 C.
= 65 C.
0
0
Source-drain current as a function of
source-drain diode forward voltage;
typical values.
0.4
2
4
0.8
(1)
6
(2)
1.2
(3)
8
Product specification
V GS = 10 V
1.6
V SD (V)
10
BSP255
V DS (V)
MBH441
MBH436
4.5 V
4.0 V
3.5 V
3.0 V
2.5 V
2.0 V
2.0
12