MBM29LV160TE70TN Meet Spansion Inc., MBM29LV160TE70TN Datasheet - Page 4

• Manufacturer Part Number: MBM29LV160TE70TN
• Description: Flash Memory Cmos 16m 2m ? 8/1m ? 16 Bit
• Manufacturer: Meet Spansion Inc.

FUJITSU SEMICONDUCTOR
FLASH MEMORY
CMOS
16M (2M × 8/1M × 16) BIT
MBM29LV160TE/BE
■ GENERAL DESCRIPTION
■ PRODUCT LINE UP
Power Supply Voltage V
Max Address Access Time (ns)
Max CE Access Time (ns)
Max OE Access Time (ns)
The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words
of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP (1), 48-pin CSOP and 48-ball FBGA
packages. The device is designed to be programmed in-system with the standard system 3.0 V V
12.0 V V
in standard EPROM programmers.
The standard MBM29LV160TE/BE offers access times of 70 ns and 90 ns allowing operation of high-speed
microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE), write
enable (WE), and output enable (OE) controls.
The MBM29LV160TE/BE is pin and command set compatible with JEDEC standard E
written to the command register using standard microprocessor write timings. Register contents serve as input
to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch
addresses and data needed for the programming and erase operations. Reading data out of the device is similar
to reading from 5.0 V and 12.0 V Flash or EPROM devices.
The MBM29LV160TE/BE is programmed by executing the program command sequence. This will invoke the
Embedded Program
and verifies proper cell margins. Typically, each sector can be programmed and verified in about 0.5 seconds.
Erase is accomplished by executing the erase command sequence. This will invoke the Embedded Erase
Algorithm which is an internal algorithm that automatically preprograms the array if it is not already programmed
before executing the erase operation. During erase, the device automatically times the erase pulse widths and
verifies proper cell margins.
DATA SHEET
PP
and 5.0 V V
TM
Part No.
* Algorithm which is an internal algorithm that automatically times the program pulse widths
CC
CC
(V)
are not required for write or erase operations. The device can also be reprogrammed
Retired Product DS05-20883-7E_July 31, 2007
70/90
70
70
70
30
MBM29LV160TE/160BE
V
CC
= 3.0 V
+0.6 V
–0.3 V
2
PROMs. Commands are
DS05-20883-7E
90
90
90
35
CC
(Continued)
supply.
TM
*