MBM29LV160TE70TN Meet Spansion Inc., MBM29LV160TE70TN Datasheet - Page 32

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MBM29LV160TE70TN

Manufacturer Part Number
MBM29LV160TE70TN
Description
Flash Memory Cmos 16m 2m ? 8/1m ? 16 Bit
Manufacturer
Meet Spansion Inc.
Datasheet

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32
MBM29LV160TE
■ AC CHARACTERISTICS
Note: Test Conditions:
Read Cycle Time
Address to Output Delay
Chip Enable to Output Delay
Output Enable to Output Delay
Chip Enable to Output High-Z
Output Enable to Output High-Z
Output Hold Time From Address, CE or
OE, Whichever Occurs First
RESET Pin Low to Read Mode
CE to BYTE Switching Low or High
• Read Only Operations Characteristics
Notes : C
Output Load:1 TTL gate and 30 pF (MBM29LV160TE/BE70)
Input rise and fall times: 5 ns
Input pulse levels: 0.0 V or 3.0 V
Timing measurement reference level
Output: 0.5 Vccf
Input: 0.5 Vccf
C
L
L
Parameter
= 30 pF including jig capacitance (MBM29LV160TE/BE70)
= 100 pF including jig capacitance (MBM29LV160TE/BE90)
1 TTL gate and 100 pF (MBM29LV160TE/BE90)
Device
Under
Test
70/90
C
L
Retired Product DS05-20883-7E_July 31, 2007
/MBM29LV160BE
JEDEC Standard
t
t
t
t
t
t
t
GHQZ
AVAV
AVQV
ELQV
GLQV
EHQZ
AXQX
Test Conditions
Symbol
Diode = 1N3064
or Equivalent
t
READY
t
t
t
ELFH
t
t
t
t
ELFL
6.2 kΩ
ACC
t
t
OH
RC
CE
OE
DF
DF
CE = V
OE = V
OE = V
Setup
3.3 V
Test
2.7 kΩ
IL
IL
IL
Diode = 1N3064
or Equivalent
Min
70
0
70
70/90
Value (Note)
Max
70
70
30
25
25
20
5
Min
90
0
90
Max
90
90
35
30
30
20
5
Unit
ns
ns
ns
ns
ns
ns
ns
μs
ns

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