BFM520 NXP Semiconductors, BFM520 Datasheet - Page 5
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BFM520
Manufacturer Part Number
BFM520
Description
Dual Npn Wideband Transistor
Manufacturer
NXP Semiconductors
Datasheet
1.BFM520.pdf
(10 pages)
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Philips Semiconductors
1996 Oct 08
handbook, halfpage
handbook, halfpage
Dual NPN wideband transistor
V
Fig.4
CE
(mW)
Fig.2 Power derating as a function of soldering
P tot
h FE
= 6 V.
250
200
150
100
1.5
0.5
50
1
0
0
10
0
DC current gain as a function of collector
current; typical values.
double loaded
single loaded
point temperature; typical values.
2
10
50
1
100
1
150
10
I C (mA)
T s (
MBG228
MRA703
o
C)
200
10
2
5
handbook, halfpage
handbook, halfpage
f = 1 GHz; T
Fig.3
I
Fig.5
C
(GHz)
(pF)
C re
= 0; f = 1 MHz.
f T
0.6
0.4
0.2
12
0
8
4
0
10
0
Transition frequency as a function of
collector current; typical values.
Feedback capacitance as a function of
collector-base voltage; typical values.
1
amb
= 25 C.
4
1
8
10
Product specification
V CB (V)
I C (mA)
V CE = 6V
V CE = 3V
BFM520
MRA704
MRA705
12
10
2