BFM520 NXP Semiconductors, BFM520 Datasheet - Page 2

• Manufacturer Part Number: BFM520
• Description: Dual Npn Wideband Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
Dual transistor with two silicon NPN RF dies in a surface
mount 6-pin SOT363 (S-mini) package. The transistor is
primarily intended for wideband applications in the
GHz-range in the RF front end of analog and digital cellular
phones, cordless phones, radar detectors, pagers and
satellite TV-tuners.
QUICK REFERENCE DATA
1996 Oct 08
Any single transistor
C
f
G
F
R
SYMBOL
T
s
Small size
Temperature and h
Low noise and high gain
High gain at low current and low capacitance at low
voltage
Gold metallization ensures excellent reliability.
Oscillator and buffer amplifiers
Balanced amplifiers
LNA/mixers.
Dual NPN wideband transistor
re
th j-s
UM
21
2
feedback capacitance
transition frequency
insertion power gain
maximum unilateral power gain
noise figure
thermal resistance from junction
to soldering point
FE
PARAMETER
matched
I
I
I
f = 900 MHz; T
I
f = 900 MHz; T
I
f = 900 MHz;
single loaded
double loaded
e
C
C
C
C
= 0; V
= 20 mA; V
= 20 mA; V
= 20 mA; V
= 5 mA; V
CB
2
CONDITIONS
= 3 V; f = 1 MHz
CE
PINNING - SOT363A
handbook, halfpage
CE
CE
CE
PIN
amb
amb
S
= 3 V;
1
2
3
4
5
6
Marking code: N2.
= 3 V; f = 900 MHz
= 3 V;
= 3 V;
=
= 25 C
= 25 C
opt
Top view
SYMBOL
1
Fig.1 Simplified outline and symbol.
6
b
e
b
e
c
c
1
1
2
2
2
1
5
2
4
3
base 1
emitter 1
collector 2
base 2
emitter 2
collector 1
13
MIN.
b 1
DESCRIPTION
0.4
9
14.5
15
1.2
TYP.
Product specification
e 1
c 1
b 2
1.6
230
115
BFM520
MAX.
MAM210
e 2
c 2
pF
GHz
dB
dB
dB
K/W
K/W
UNIT