BFM520 NXP Semiconductors, BFM520 Datasheet - Page 4

• Manufacturer Part Number: BFM520
• Description: Dual Npn Wideband Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
CHARACTERISTICS
T
Note
1. G
1996 Oct 08
DC characteristics of any single transistor
V
V
V
I
h
DC characteristics of the dual transistor
AC characteristics of any single transistor
f
C
C
G
F
SYMBOL
j
CBO
T
s
FE
h
V
= 25 C unless otherwise specified.
(BR)CBO
(BR)CEO
(BR)EBO
Dual NPN wideband transistor
c
re
UM
21
FE
BEO
2
UM
is the maximum unilateral power gain, assuming s
collector-base breakdown voltage
collector-emitter breakdown voltage I
emitter-base breakdown voltage
collector-base leakage current
DC current gain
ratio of highest and lowest DC
current gain
difference between highest and
lowest base-emitter voltage
(offset voltage)
transition frequency
collector capacitance
feedback capacitance
maximum unilateral power gain;
note 1
insertion power gain
noise figure
PARAMETER
I
I
V
I
I
V
I
I
I
I
I
T
I
T
I
f = 900 MHz; T
I
f = 900 MHz;
I
f = 900 MHz;
I
f = 2 GHz;
C
C
E
C
C1
E1
C
E
C
C
C
C
C
C
C
amb
amb
CB
CE1
= 2.5 A; I
= i
= 2.5 A; I
= 10 A; I
= 20 mA; V
= 20 mA; V
= 0; V
= 20 mA; V
= 20 mA; V
= 20 mA; V
= 5 mA; V
= 20 mA; V
= 5 mA; V
= I
= I
= 6 V; I
e
= 25 C; f = 900 MHz
= 25 C; f = 2 GHz
= V
E2
C2
= 0; V
CB
= 30 mA; T
4
= 20 mA;
CE2
12
CONDITIONS
= 3 V; f = 1 MHz
is zero.
E
S
B
CB
CE
CE
C
= 6 V
E
= 0
CE
CE
CE
CE
CE
CE
=
= 0
= 0
= 0
amb
S
S
= 3 V; f = 1 MHz
= 3 V;
= 3 V;
=
=
= 6 V
= 3 V; f = 1 GHz
= 3 V;
= 3 V;
= 3 V;
= 3 V;
opt
= 25 C
amb
opt
opt
G
UM
= 25 C
=
10
log
------------------------------------------------------------ dB
20
8
2.5
60
1
0
13
1
MIN.
–
s
11
120
1.2
1
9
0.5
0.4
15
9
14.5
1.2
1.7
1.9
2
s
TYP.
21
Product specification
1
2
–
s
50
250
1.6
2.1
MAX.
BFM520
22
2
V
V
V
nA
mV
GHz
pF
pF
dB
dB
dB
dB
dB
dB
UNIT