BF908-R NXP Semiconductors, BF908-R Datasheet - Page 4

• Manufacturer Part Number: BF908-R
• Description: Bf908; Bf908r Dual-gate Mos-fets
• Manufacturer: NXP Semiconductors

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board.
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
Common source; T
R
I
C
C
C
C
F
j
DSS
SYMBOL
SYMBOL
SYMBOL
y
V
V
V
V
I
I
= 25 C; unless otherwise specified.
th j-a
ig1-s
ig2-s
os
rs
Dual-gate MOS-FETs
G1-SS
G2-SS
fs
(BR)G1-SS
(BR)G2-SS
(P)G1-S
(P)G2-S
thermal resistance from junction to ambient
gate 1-source breakdown voltage
gate 2-source breakdown voltage
gate 1-source cut-off voltage
gate 2-source cut-off voltage
drain-source current
gate 1 cut-off current
gate 2 cut-off current
forward transfer admittance
input capacitance at gate 1
input capacitance at gate 2
output capacitance
reverse transfer capacitance
noise figure
BF908
BF908R
amb
PARAMETER
= 25 C; V
PARAMETER
DS
PARAMETER
= 8 V; V
G2-S
pulsed; T
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 200 MHz; G
f = 800 MHz; G
Rev. 03 - 14 November 2007
= 4 V; I
V
V
V
V
V
V
V
G2-S
G1-S
G2-S
G1-S
G2-S
G2-S
G1-S
j
D
= V
= V
= 4 V; V
= 4 V; V
= 4 V; V
= V
= V
= 25 C; f = 1 MHz
= 15 mA; unless otherwise specified.
CONDITIONS
DS
DS
DS
DS
CONDITIONS
S
S
= 0; I
= 0; I
= 0; V
= 0; V
= 2 mS; B
= G
DS
DS
DS
Sopt
= 8 V; I
= 8 V; I
= 8 V; V
G1-S
G2-S
G1-S
G2-S
note 1
; B
= 10 mA
= 10 mA
= 5 V
= 5 V
S
S
CONDITIONS
D
D
= B
= B
G1-S
= 20 A
= 20 A
Sopt
Sopt
= 0
8
8
3
36
2.4
1.2
1.2
20
MIN.
MIN.
BF908; BF908R
15
43
3.1
1.8
1.7
30
0.6
1.5
TYP.
TYP.
VALUE
Product specification
500
550
20
20
2
1.5
27
50
50
50
4
2.5
2.2
45
1.2
2.5
MAX.
MAX.
4 of 9
UNIT
K/W
K/W
V
V
V
V
mA
nA
nA
mS
pF
pF
pF
fF
dB
dB
UNIT
UNIT