BF908-R NXP Semiconductors, BF908-R Datasheet - Page 3

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BF908-R

Manufacturer Part Number
BF908-R
Description
Bf908; Bf908r Dual-gate Mos-fets
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board.
V
I
P
T
T
D
SYMBOL
I
I
stg
j
handbook, halfpage
DS
tot
Dual-gate MOS-FETs
G1
G2
(mW)
P
tot
250
200
150
100
50
0
0
Fig.3 Power derating curves.
drain-source voltage
drain current
gate 1 current
gate 2 current
total power dissipation
storage temperature
operating junction temperature
BF908
BF908R
BF908R
50
PARAMETER
BF908
100
150
T amb ( C)
MRC275
o
Rev. 03 - 14 November 2007
see Fig.3; note 1
200
up to T
up to T
amb
amb
CONDITIONS
= 50 C
= 40 C
65
MIN.
BF908; BF908R
12
40
10
10
200
200
+150
150
Product specification
MAX.
V
mA
mA
mA
mW
mW
3 of 9
C
C
UNIT

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