BF908-R NXP Semiconductors, BF908-R Datasheet - Page 2

• Manufacturer Part Number: BF908-R
• Description: Bf908; Bf908r Dual-gate Mos-fets
• Manufacturer: NXP Semiconductors

NXP Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
Depletion type field-effect transistor in a plastic
microminiature SOT143 or SOT143R package. The
transistors are protected against excessive input voltage
surges by integrated back-to-back diodes between gates
and source.
PINNING
QUICK REFERENCE DATA
V
I
P
T
C
C
F
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
D
SYMBOL
y
High forward transfer admittance
Short channel transistor with high forward transfer
admittance to input capacitance ratio
Low noise gain controlled amplifier up to 1 GHz.
VHF and UHF applications with 12 V supply voltage,
such as television tuners and professional
communications equipment.
j
DS
tot
ig1-s
rs
Dual-gate MOS-FETs
fs
PIN
1
2
3
4
drain-source voltage
drain current
total power dissipation
operating junction temperature
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
SYMBOL
s, b
g
g
d
2
1
CAUTION
source
drain
gate 2
gate 1
PARAMETER
DESCRIPTION
Rev. 03 - 14 November 2007
f = 1 MHz
f = 800 MHz
handbook, halfpage
CONDITIONS
handbook, halfpage
Top view
BF908R marking code: %M2.
Top view
BF908 marking code: %M1.
Fig.2
Fig.1
3
4
2
1
Simplified outline (SOT143R) and
symbol; BF908R.
Simplified outline (SOT143) and
symbol; BF908.
1
36
2.4
20
4
MIN.
3
2
43
3.1
30
1.5
BF908; BF908R
TYP.
MAM039
MAM040
Product specification
g
g 1
2
g 2
g
1
12
40
200
150
50
4
45
2.5
MAX.
2 of 9
s,b
V
mA
mW
mS
pF
pF
dB
d
C
s,b
UNIT
d