RJK1525DPE Renesas Electronics Corporation., RJK1525DPE Datasheet - Page 5

• Manufacturer Part Number: RJK1525DPE
• Description: Silicon N Channel Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

RJK1525DPJ, RJK1525DPE, RJK1525DPF
REJ03G0623-0200 Rev.2.00
Jun 30, 2010
50
20
10
30
40
0
0.003
0.001
0.03
0.01
0.3
0.1
Vin
10 V
5 V
Source to Drain Voltage
3
1
10 μ
Vin Monitor
10 Ω
Switching Time Test Circuit
10 V
0.4
0.5
D = 1
Reverse Drain Current vs.
Source to Drain Voltage
0.8
100 μ
D.U.T.
V
Normalized Transient Thermal Impedance vs. Pulse Width
1.2
GS
= 0 V
Pulse Test
V
R
1.6
SD
V
= 75 V
L
DD
1 m
Vout
Monitor
(V)
Pulse Width
2.0
10 m
td(on)
PW (s)
5
4
3
2
1
0
Vout
-25
Vin
θch – c(t) = γs (t) • θch – c
θch – c = 1.67°C/W, Tc = 25°C
P
V
DM
DS
0
100 m
Gate to Source Cutoff Voltage
Case Temperature
10%
= 10 V
10%
vs. Case Temperature
25
90%
tr
Waveform
PW
T
50
td(off)
75
1
I
D
90%
= 10 mA
Tc = 25°C
D =
100
Tc (°C)
90%
PW
0.1 mA
125
1 mA
T
10%
Preliminary
10
t f
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