RJK1525DPE Renesas Electronics Corporation., RJK1525DPE Datasheet - Page 3

• Manufacturer Part Number: RJK1525DPE
• Description: Silicon N Channel Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

RJK1525DPJ, RJK1525DPE, RJK1525DPF
Main Characteristics
REJ03G0623-0200 Rev.2.00
Jun 30, 2010
100
75
50
25
20
16
12
8
8
4
6
4
2
0
0
0
Drain to Source Saturation Voltage vs.
Drain to Source Voltage
Gate to Source Voltage
Power vs. Temperature Derating
Typical Output Characteristics
Case Temperature
4
4
50
10 V
Gate to Source Voltage
7 V
8
8
100
12
12
6.5 V
Tc (°C)
Pulse Test
150
Pulse Test
V
V
DS
GS
I
16
16
D
= 25 A
12.5 A
(V)
(V)
5.5 V
8.5 A
6 V
200
20
20
1000
0.03
0.01
0.05
0.02
0.01
300
100
0.3
0.1
0.5
0.2
0.1
30
10
20
16
12
3
1
8
4
1
0
Static Drain to Source on State Resistance
1
1
Operation in this
area is limited by
R
V
DS(on)
V
Pulse Test
Drain to Source Voltage
GS
DS
Gate to Source Voltage
Typical Transfer Characteristics
Maximum Safe Operation Area
3
3
= 10 V
= 10 V
2
Tc = 75°C
Drain Current
vs. Drain Current
10
10
4
30
30
−25°C
6
25°C
100
I
100
D
Pulse Test
Ta = 25°C
V
(A)
V
DS
GS
300
300
8
Preliminary
(V)
Page 3 of 7
(V)
1000
1000
10