RJK1525DPE Renesas Electronics Corporation., RJK1525DPE Datasheet - Page 4

• Manufacturer Part Number: RJK1525DPE
• Description: Silicon N Channel Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

RJK1525DPJ, RJK1525DPE, RJK1525DPF
REJ03G0623-0200 Rev.2.00
Jun 30, 2010
1000
500
200
100
240
180
120
0.5
0.4
0.3
0.2
0.1
50
20
10
60
5
2
1
0
−25
0
Static Drain to Source on State Resistance
1
V
V
I
DS
GS
D
Reverse Drain Current
= 25 A
0
Dynamic Input Characteristics
= 10 V
Case Temperature
3
Body-Drain Diode Reverse
4
Gate Charge
I
D
25
= 25 A
vs. Temperature
10
Recovery Time
8
50
V
di / dt = 100 A / μs
V
DD
30
GS
V
DD
= 120 V
75
8.5 A
= 0, Ta = 25°C
12
Qg (nC)
= 30 V
60 V
30 V
120 V
100
60 V
Tc (°C)
100 125
Pulse Test
I
DR
12.5 A
16
300
(A)
V
GS
1000
150
20
16
12
8
4
0
100000
30000
10000
3000
1000
1000
300
100
100
100
0.3
0.1
30
10
10
30
10
0.1
1
0.1
3
1
0
t r
t d(on)
V
PW = 5 μs, duty < 1 %
R
Drain to Source Voltage
Forward Transfer Admittance vs.
GS
G
t f
0.3
0.3
= 10 Ω
= 10 V, V
Switching Characteristics
Drain to Source Voltage
Drain Current
Typical Capacitance vs.
Drain Current
75°C
50
Tc = −25°C
1
1
Drain Current
t d(off)
DD
25°C
3
3
= 75 V
I
I
100
D
D
10
10
V
Pulse Test
Ciss
Coss
Crss
DS
(A)
(A)
V
f = 1 MHz
V
Preliminary
GS
DS
= 10 V
Page 4 of 7
30
30
t f
= 0
(V)
t r
100
150
100