EM584161 Etron Technology Inc., EM584161 Datasheet - Page 4

• Manufacturer Part Number: EM584161
• Description: 256k X 16 Low Power Sram
• Manufacturer: Etron Technology Inc.

EtronTech
DC Characteristics (Ta = -40°C to 85°C, V DD = 1.65V to 1.95V)
Notes:
* Typical value are measured at T
** In standby mode with CE1# ≥ V DD - 0.2V, these limits are assured for the condition
CE2 ≥ V
Capacitance (Ta = 25°C; f = 1 MHz)
Notes: This parameter is periodically sampled and is not 100% tested.
Parameter
Input capacitance
Output capacitance
Symbol
I DD1
I DD2
V OH
V OL
I SB
DD
- 0.2V or CE2 ≤ 0.2V.
Operating current @ min
cycle time
Operating current @ max
cycle time (1µs)
Standby current
Output HIGH Voltage
Output LOW Voltage
Symbol
C OUT
C IN
Parameter
a
= 25°C.
Min
−
−
Typ
−
−
I OH = -100 µA
I OL = 100 µA
CE1# = V IL and
CE2 = V IH and
I OUT = 0mA
Other Input = V IH /
V IL
CE1# ≥ V DD -0.2V, or
CE2 ≤ 0.2V, Others
inputs ≤ 0.2V or ≥
V DD -0.2V
Test Conditions
Max
10
10
4
Unit
pF
pF
Test Conditions
V OUT = GND
V IN = GND
V DD –
Min.
0.2V
−
−
−
−
Rev 2.0
Typ.
−
−
−
−
−
EM584161
Max.
0.3
15
2
8
−
Nov. 2003
Unit
mA
mA
µA
V
V