EM584161 Etron Technology Inc., EM584161 Datasheet - Page 11

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EM584161

Manufacturer Part Number
EM584161
Description
256k X 16 Low Power Sram
Manufacturer
Etron Technology Inc.
Datasheet
EtronTech
Data Retention Characteristics (Ta = -40°C to 85°C)
CE1# Controlled Data Retention Mode
V DD
1.65V
1.4V
V DR
CE1#,
LB#/UB#
GND
CE2 Controlled Data Retention Mode
V D R
Note:
1. CE1# ≥ V
2. CE2 ≤ 0.2V
GND
CE2
0.4 V
Symbol
V DD
1.6 5V
t RDR
t SDR
V DR
I DR
Data Retention Supply
Voltage
Data Retention Current
Chip Deselect to Data Retention Mode Time
Recovery Time
DD
– 0.2V or UB# = LB# ≥ V
t SDR
Parameter
t SDR
CE1# ≥ V
VIN ≥ V
VDD = 0.9V, CE1# ≥ V
CE2 ≤ 0.2V, VIN ≥ V
VIN ≤ 0.2V
DD
– 0.2V
DD
DD
- 0.2V or VIN ≤ 0.2V
Data Reten tion Mode
- 0.2V, CE2 ≤ 0.2V,
Data Retention Mode
Note 2
11
Note 1
DD
DD
- 0.2V or
- 0.2V,
t RDR
Min
t RC
0.9
Rev 2.0
0
EM584161
t RD R
Typ
Max
1.95
4.0
Nov. 2003
Unit
µA
ns
ns
V

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