TPC8213-H TOSHIBA Semiconductor CORPORATION, TPC8213-H Datasheet - Page 6

• Manufacturer Part Number: TPC8213-H
• Description: Toshiba Field Effect Transistor Silicon N-channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

100
0.1
10
1
0.1
Curves must be derated linearly
with increase in temperature.
I D max (Pulse) *
* Single - pulse
Ta=25℃
Drain-source voltage V
1000
1000
100
100
0.1
0.1
10
10
0.001
0.001
Safe operating area
1
1
1
Single - pulse
Single-device value at dual
operation
10ms *
0.01
0.01
10
V DSS max
DS
t=1ms *
(note 3b)
(V)
0.1
0.1
100
Pulse width t
r
r
6
th
th
Device mounted on a glass-epoxy board (a) (note 2a)
Device mounted on a glass-epoxy board (b) (Note 2b)
(1)Single-device operation (Note 3a)
(2)Single-device value at dual operation (Note 3b)
(3)Single-device operation (Note 3a)
(4)Single-device value at dual operation (Note 3b)
– t
– t
1
1
w
w
w
(s)
10
10
100
100
(3)
(2)
(4)
(1)
1000
1000
TPC8213-H
2006-11-17