TPC8213-H TOSHIBA Semiconductor CORPORATION, TPC8213-H Datasheet - Page 5

• Manufacturer Part Number: TPC8213-H
• Description: Toshiba Field Effect Transistor Silicon N-channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

10000
1000
100
100
1.6
0.8
1.2
0.4
80
10
60
40
20
−80
0
0.1
2
0
0
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
(1)
(2)
(3)
(4)
Common source
Pulse test
V GS = 4.5 V
V GS = 10 V
−40
Drain-source voltage V
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Device mounted on a Glass-epoxy board (a)(Note 2a)
Device mounted on a glass-epoxy board(b)(Note 2b)
t=10s
40
(1)Single-device operation (Note 3a)
(2)Single-device value at dual operation(Note 3b)
(3)Single-device operation(Note 3a)
(4)Single-device value at dual operation(Note 3b)
Capacitance – V
0
1
R
DS (ON)
P
D
40
80
– Ta
1.3A,2.5A
I D = 1.3A,2.5A,5A
– Ta
80
10
DS
DS
120
I D = 5A
C oss
C rss
C iss
(V)
120
160
100
160
5
100
0.1
2.5
1.5
0.5
10
60
40
10
50
30
20
1
−80
2
1
0
0
0
0
Common source
Common source
ソース接地
V DS = 10 V
V
I D = 1 mA
I
Pulse test
パルス測定
V DS
Ta = 25°C
Pulse test
10
D
DS
= 1 mA
−0.2
−40
Drain-source voltage V
= 10 V
Ambient temperature Ta (°C)
Total gate charge Q
Dynamic input / output
5
4
−0.4
3
1
0
characteristics
V GS
V DD = 12 V
I
DR
V
th
−0.6
– V
40
0
– Ta
48
8
DS
V GS = -1 V
−0.8
Common source
I D = 5 A
Ta = 25°C
Pulse test
80
g
24
DS
TPC8213-H
(nC)
12
(V)
−1.0
120
2006-11-17
−1.2
160
16
10
4
12
8
6
2
0