TPC8213-H TOSHIBA Semiconductor CORPORATION, TPC8213-H Datasheet - Page 2

• Manufacturer Part Number: TPC8213-H
• Description: Toshiba Field Effect Transistor Silicon N-channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Thermal Characteristics
Marking
Thermal resistance, channel to ambient
(t = 10 s)
Thermal resistance, channel to ambient
(t = 10 s)
Note 1: The channel temperature should not exceed 150°C during use.
Note 2:
Note 3:
Note 4: V
Note 5: Repetitive rating: pulse width limited by maximum channel temperature
Note 6: • on the lower left of the marking indicates Pin 1.
a) Device mounted on a glass-epoxy board (a)
a) The power dissipation and thermal resistance values are shown for a single device
b) The power dissipation and thermal resistance values are shown for a single device
(During single-device operation, power is only applied to one device.)
(During dual operation, power is evenly applied to both devices.)
* Weekly code: (Three digits)
T P C 8 2 1 3
H
DD
= 24 V, T
(a)
Characteristic
ch
Week of manufacture
(01 for first week of year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the calendar year)
= 25°C (Initial), L = 5 mH, R
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
(Note 2a) Single-device value at
(Note 2b) Single-device value at
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Single-device operation
dual operation
Single-device operation
dual operation
(Note 3a)
(Note 3b)
(Note 3a)
(Note 3b)
G
b) Device mounted on a glass-epoxy board (b)
2
= 25 Ω, I
R
R
R
R
th (ch-a) (1)
th (ch-a) (2)
th (ch-a) (1)
th (ch-a) (2)
Symbol
AR
(b)
= 5.0 A
Max
83.3
114
167
278
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
°C/W
Unit
TPC8213-H
2006-11-17