TPC8125 TOSHIBA Semiconductor CORPORATION, TPC8125 Datasheet - Page 5

• Manufacturer Part Number: TPC8125
• Description: Toshiba Field Effect Transistor Silicon P Channel Mos Type U-mos?
• Manufacturer: TOSHIBA Semiconductor CORPORATION

10000
1000
100
1.6
1.2
0.8
0.4
30
25
20
15
10
−0.1
−80
5
0
2
0
0
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
Common source
Pulse test
(1)
(2)
V GS = −4.5 V
V GS = −10 V
−40
Drain−source voltage V
Ambient temperature Ta (
Ambient temperature Ta (
40
Capacitance – V
−1
0
R
DS (ON)
(1)Device mounted on a glass-epoxy
(2)Device mounted on a glass-epoxy
t = 10 s
I D = −2.5, −5, −10 A
P
board(a) (Note 2a)
board(b) (Note 2b)
D
40
80
– Ta
– Ta
I D = −2.5, −5, −10 A
−10
80
DS
DS
120
C rss
C oss
C iss
°
°
C)
(V)
C)
120
−100
160
160
5
−100
−0.1
−1.6
−1.2
−0.8
−0.4
−10
−30
−25
−20
−15
−10
−5
−1
−2
0
−80
0
0
0
−12
−6
V DD = −24 V
Common source
V DS = −10 V
I D = −0.5mA
Pulse test
V DS
Drain−source voltage V
−40
0.2
Ambient temperature Ta (
Total gate charge Q
20
Dynamic input/output
−10
0.4
0
characteristics
40
I
DR
V
−4.5
th
V GS
−1
0.6
– V
40
– Ta
DS
−3
60
−6
0.8
80
g
V GS = 0 V
−12
DS
Common source
Ta = 25°C
Pulse test
Common source
I D = −10 A
Ta = 25°C
Pulse test
(nC)
V DD = −24 V
80
°
(V)
120
C)
2009-11-17
TPC8125
1
160
100
1.2
−30
−25
−20
−15
−10
−5
0