TPC8125 TOSHIBA Semiconductor CORPORATION, TPC8125 Datasheet - Page 3

• Manufacturer Part Number: TPC8125
• Description: Toshiba Field Effect Transistor Silicon P Channel Mos Type U-mos?
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Source-Drain Ratings and Characteristics
Note 6: VDSX mode (the application of a plus voltage between gate and source) may cause decrease in maximum
Gate leakage current
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“miller”) charge
Drain reverse
current
Forward voltage (diode)
rating of drain-source voltage.
Characteristics
Characteristics
Pulse
Rise time
Turn-ON time
Fall time
Turn-OFF time
(Note 1)
(Ta = 25°C)
V
V
R
Symbol
Symbol
(BR) DSS
(BR) DSX
DS (ON)
V
Q
I
I
C
I
C
C
Q
GSS
DSS
DRP
V
t
t
Q
DSF
oss
on
off
gs1
t
t
iss
rss
gd
th
r
f
g
V
V
I
I
V
V
V
V
Duty ≤ 1%, t
V
I
I
D
D
V
D
DR
GS
DS
DS
GS
GS
DS
DD
GS
= −10 mA, V
= −10 mA, V
= −10 A
3
= −10 A, V
(Ta = 25°C)
= ±20 V, V
= −30 V, V
= −10 V, I
= −4.5 V, I
= −10 V, I
= −10 V, V
−10 V
≈ −24 V, V
0 V
Test Condition
Test Condition
w
= 10 μs
D
D
GS
GS
GS
D
DS
GS
GS
GS
= −0.5 mA
= −5 A
⎯
= −5 A
= 0 V
= 0 V
= 10 V (Note 6)
= 0 V
= 0 V
= 0 V, f = 1 MHz
= −10 V,
I
D
V
= −5 A
DD
≈ −15 V
V
OU
−0.8
Min
−30
−21
Min
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2580
Typ.
Typ.
430
490
245
13
10
16
75
64
17
⎯
⎯
⎯
⎯
⎯
⎯
⎯
8
6
2009-11-17
TPC8125
±100
−2.0
Max
Max
−10
−40
1.2
17
13
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Unit
mΩ
nC
nA
μA
pF
ns
V
V
A
V