TPC8125 TOSHIBA Semiconductor CORPORATION, TPC8125 Datasheet - Page 2

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TPC8125

Manufacturer Part Number
TPC8125
Description
Toshiba Field Effect Transistor Silicon P Channel Mos Type U-mos?
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Thermal Characteristics
Marking
Thermal resistance, channel to ambient
(t = 10 s)
Thermal resistance, channel to ambient
(t = 10 s)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a)Device mounted on a glass-epoxy board (a)
Note 3: V
Note 4: • on lower left of the marking indicates Pin 1.
Note 5: A line under a Lot No. identifies the indication of product Labels.
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
(Note 4)
※ Weekly code: (Three digits)
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
T P C 8 1 2 5
DD
= −24 V, T
Characteristics
(a)
ch
Week of manufacture
(01 for the first week of a year: sequential number up to 52 or 53)
Year of manufacture
(The last digit of a year)
= 25 °C (initial), L = 500 μH, R
Part No.
(or abbreviation code)
Lot No.
Note 5
25.4 × 25.4 × 0.8
(Note 2a)
(Note 2b)
FR-4
(Unit: mm)
R
R
Symbol
th (ch-a)
th (ch-a)
2
G
65.8
Max
125
= 25 Ω, I
(b)Device mounted on a glass-epoxy board (b)
°C/W
°C/W
Unit
AR
= −10A
(b)
25.4 × 25.4 × 0.8
FR-4
(Unit: mm)
2009-11-17
TPC8125

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