TPC6110 TOSHIBA Semiconductor CORPORATION, TPC6110 Datasheet - Page 5

• Manufacturer Part Number: TPC6110
• Description: Toshiba Field Effect Transistor Silicon P Channel Mos Type U-mos?
• Manufacturer: TOSHIBA Semiconductor CORPORATION

10000
1000
100
120
2.5
2.0
1.5
1.0
0.5
10
90
60
30
−80
−0.1
0
0
0
Common source
Pulse Test
(1) t = 5s
(2) t = 5s
V GS = −4.5 V
V GS = −10 V
−40
Drain-source voltage V DS (V)
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
40
(1) Device mounted on a glass-epoxy board
(2) Device mounted on a glass-epoxy board
Capacitance – V
−1
0
R
I D = −1.1, −2.2, −4.5 A
DS (ON)
P
D
40
80
− Ta
− Ta
I D = −1.1, −2.2, −4.5 A
−10
80
DS
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
120
C oss
(a) (Note 2a)
(b) (Note 2b)
C iss
C rss
120
−100
160
160
5
−100
−0.1
−2.0
−1.6
−1.2
−0.8
−0.4
−10
−30
−25
−20
−15
−10
−1
−5
−80
0
0
0
−12
−6
V DS = −24 V
0
Common source
V DS = −10 V
I D = −0.1mA
Pulse test
Common source
Ta = 25°C
Pulse Test
−40
Drain-source voltage V DS (V)
Ambient temperature Ta (°C)
4
Total gate charge Q g (nC)
0.4
Dynamic input / output
0
−10
characteristics
I
8
DR
−1
−6
V
th
−3
0.8
− V
40
−12
− Ta
V GS = 0 V
DS
−4.5
12
Common source
V GS = −10 V
I D = −0.1 mA
Pulse Test
80
V DD = −24 V
Common source
I D = −4.5 A
Ta = 25°C
Pulse Test
1.2
V GS
16
120
2009-07-17
TPC6110
160
1.6
20
−30
−25
−20
−15
−10
−5
0