TPC6110 TOSHIBA Semiconductor CORPORATION, TPC6110 Datasheet - Page 4

• Manufacturer Part Number: TPC6110
• Description: Toshiba Field Effect Transistor Silicon P Channel Mos Type U-mos?
• Manufacturer: TOSHIBA Semiconductor CORPORATION

−10
100
0.1
−5
−4
−3
−2
−1
−8
−6
−4
−2
10
−0. 1
0
0
1
0
0
Common source
V DS = −10 V
Pulse Test
Common source
V DS = −10 V
Pulse Test
−10
−0.2
Drain-source voltage V DS
−1
Gate-source voltage V GS
Drain current I D (A)
−1
−8
Ta = −55°C
Ta = −55°C
−4
−6
−0.4
−5
−2
−4.5
I
I
|Y
D
D
−3.5
25
fs
– V
– V
| – I
DS
GS
100
−0.6
D
−3
100
−3
−10
25
Common source
Ta = 25°C
Pulse Test
V GS = −2.2 V
−0.8
(V)
(V)
−4
−2.8
−2.6
−2.4
−100
−1.0
−5
4
1000
−0.8
−0.6
−0.4
−0.2
−10
100
−1
−8
−6
−4
−2
10
−0.1
0
0
1
0
0
−10
Drain-source voltage V DS
Gate-source voltage V GS
−1
−1.1
−2
−4.5
−3.5
−4
Drain current I D (A)
−1
R
V GS = −4.5 V
V
−4
−2
DS (ON)
I
DS
D
– V
−10
– V
−2.2
DS
GS
I D = −4.5 A
−6
– I
−3
−3
D
−10
Common source
Ta = 25°C
Pulse Test
Common source
Ta = 25°C
Pulse Test
Common source
Ta = 25°C
Pulse Test
V GS = −2.2 V
−8
(V)
(V)
−4
2009-07-17
−2.4
TPC6110
−2.8
−2.6
−10
−100
−5