TPC6110 TOSHIBA Semiconductor CORPORATION, TPC6110 Datasheet - Page 2

• Manufacturer Part Number: TPC6110
• Description: Toshiba Field Effect Transistor Silicon P Channel Mos Type U-mos?
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Source-Drain Ratings and Characteristics
Note 7: VDSX mode (the application of a plus voltage between gate and source) may cause decrease in maximum
Drain reverse
current
Forward voltage (diode)
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“miller”) charge
rating of drain-source voltage.
Characteristics
Characteristics
Pulse (Note 1)
Rise time
Turn-on time
Fall time
Turn-off time
Symbol
(Ta = 25°C)
V
I
DRP
DSF
V
V
R
Symbol
(BR) DSS
(BR) DSX
DS (ON)
Q
I
I
C
C
|Y
C
Q
GSS
DSS
V
t
t
Q
I
oss
on
off
gs1
DR
t
t
iss
rss
gd
th
fs
r
f
g
|
= −4.5 A, V
V
V
I
I
V
V
V
V
V
Duty ≤ 1%, t
V
I
D
D
V
D
GS
DS
DS
GS
GS
DS
DS
DD
GS
= −10 mA, V
= −10 mA, V
= −4.5 A
2
(Ta = 25°C)
= ± 20 V, V
= −30 V, V
= −10 V, I
= −4.5 V, I
= −10 V, I
= −10 V, I
= −10 V, V
−10 V
≈ −24 V, V
Test Condition
GS
0 V
= 0 V
Test Condition
—
w
= 10 μs
D
D
D
GS
GS
D
GS
GS
GS
DS
= −0.1 mA
= −2.2 A
= −2.2 A
= −2.2 A
= 0 V
= 10 V (Note 7)
= 0 V
= 0 V, f = 1 MHz
= −10 V,
= 0 V
I
D
V
= −2.2 A
DD
≈ −15 V
V
OUT
Min
—
—
−0.8
Min
−30
−21
4.2
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Typ.
—
—
Typ.
510
110
8.4
1.6
3.8
59
43
85
12
21
70
14
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6
Max
2009-07-17
−18
1.2
±100
TPC6110
−2.0
Max
−10
77
56
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Unit
Unit
A
V
mΩ
nC
nA
μA
pF
ns
V
V
S