ESD3V3U4ULC Infineon Technologies, ESD3V3U4ULC Datasheet - Page 9

• Manufacturer Part Number: ESD3V3U4ULC
• Manufacturer: Infineon Technologies

Specifications of ESD3V3U4ULC

• Packages: TSLP-9-1
• Vesd(min)(iec61000-4-2 Contact): 25.0 kV
• Vrwm: 3.3 V
• Ct @ F=1mhz: 0.5 pF
• Ir (typ): 10.0 nA
• Vbr (min): 4.0 V

Table 4
Parameter
Line capacitance
Channel capacitance
matching between
I/O to GND
Channel capacitance
matching between
I/O to I/O
1) Total capacitance line to ground
Table 5
Parameter
Clamping voltage
Forward clamping
voltage
Dynamic resistance
1) Please refer to Application Note AN210. TLP parameter: Z
Final Data Sheet
to t
I
PP2
2
1)
= 40 A.
= 60 ns, extraction of dynamic resistance using least squares fit of TLP charactertistic between I
[2]
RF Characteristics at
ESD Characteristics at
1)
1)
[2]
1)
[2]
Symbol
C
∆
∆
Symbol
V
V
R
C
C
CL
FC
DYN
L
i/o-GND
i/o-i/o
T
Min.
–
–
–
–
Min.
–
–
–
–
–
–
A
T
A
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
Typ.
0.4
0.2
0.035
0.017
Typ.
8
11
6
9
0.19
0.23
Values
Values
9
0
= 50 Ω , t
Max.
0.65
0.35
–
–
Max.
–
–
–
–
–
–
p
= 100ns, t
r
= 300ps, averaging window: t
Unit
pF
pF
pF
pF
Unit
V
V
V
V
Ω
Ω
Revision 1.0, 2012-01-10
Note /
Test Condition
V
I/O to
V
I/O to I/O
V
I/O to GND
V
I/O to I/O
Note /
Test Condition
I
from I/O to GND
I
from I/O to GND
I
from GND to I/O
I
from GND to I/O
I/O to GND
GND to I/O
PP
PP
PP
PP
R
R
R
R
ESD3V3U4ULC
= 0 V,
= 0 V,
= 0 V,
= 0 V,
= 16 A,
= 30 A,
= 16 A,
= 30 A,
PP1
GND
Characteristics
= 10 A and
f
f
f
f
= 1 MHz,
= 1 MHz,
= 1 MHz,
= 1 MHz,
1
= 30 ns